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Hajenius M, Baselmans JJA, Baryshev A, Gao JR, Klapwijk TM, Kooi JW, et al. Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer. J. Appl. Phys.. 2006;100(7):074507.
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de Lange G, Kuipers JJ, Klapwijk TM, Panhuyzen RA, van de Stadt H, de Graauw MWM. Superconducting resonator circuits at frequencies above the gap frequency. J. Appl. Phys.. 1995;77(4):1795–804.
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Kooi JW, Baselmans JJA, Hajenius M, Gao JR, Klapwijk TM, Dieleman P, et al. IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys.. 2007;101(4):044511.
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Burke PJ, Schoelkopf RJ, Prober DE, Skalare A, Karasik BS, Gaidis MC, et al. Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers. J. Appl. Phys.. 1999;85(3):1644–53.
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Karasik BS, Zorin MA, Milostnaya II, Elantev AI, Gol’tsman GN, Gershenzon EM. Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse. J Appl Phys. 1995;77(8):4064–70.
Abstract: A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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