|
Тархов МА. Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием [Ph.D. thesis]. НИЦ "Курчатовский институт"; 2016.
|
|
Тархов МА. Разработка сверхпроводниковых однофотонных детекторов с повышенной спектральной чувствительностью и быстродействием. Автореферат.; 2016.
|
|
Peltonen JT, Peng ZH, Korneeva YP, Voronov BM, Korneev AA, Semenov AV, et al. Coherent dynamics and decoherence in a superconducting weak link. Physic Rev B,. 2016;94:180508.
|
|
Voss C, Raz T. Never split the difference: negotiating as if your life depended on it. HarperCollins; 2016.
|
Finkel M, Thierschmann HR, Galatro L, Katan AJ, Thoen DJ, de Visser PJ, et al. Branchline and directional THz coupler based on PECVD SiNx-technology. In: 41st IRMMW-THz.; 2016.
Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
|
