Tretyakov I, Svyatodukh S, Chumakova A, Perepelitsa A, Kaurova N, Shurakov A, et al. Room temperature silicon detector for IR range coated with Ag2S quantum dots. In: IRMMW-THz.; 2019.
Abstract: A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Moshkova MA, Divochiy AV, Morozov PV, Antipov AV, Vakhtomin YB, Smirnov KV. Characterization of topologies of superconducting photon number resolving detectors. In: Proc. 8th Int. Conf. Photonics and Information Optics.; 2019. p. 465–6.
Abstract: Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Tretyakov I, Shurakov A, Perepelitsa A, Kaurova N, Svyatodukh S, Zilberley T, et al. Silicon room temperature IR detectors coated with Ag2S quantum dots. In: Proc. IWQO.; 2019. p. 369–71.
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Tretyakov I, Shurakov A, Perepelitsa A, Kaurova N, Svyatodukh S, Zilberley T, et al. Room temperature silicon detector for IR range coated with Ag2S quantum dots. Phys Status Solidi RRL. 2019;13(9):1900187–(1.
Abstract: For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
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Komrakova S, Javadzade J, Vorobyov V, Bolshedvorskii S, Soshenko V, Akimov A, et al. CMOS compatible nanoantenna-nanodiamond integration. In: J. Phys.: Conf. Ser. Vol 1410.; 2019. 012180.
Abstract: Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
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