Records |
Author |
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
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Journal Article |
Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
76 |
Issue |
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Pages |
165426(1-9) |
Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. |
Title |
Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses |
Type |
Journal Article |
Year |
2013 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
Volume |
110 |
Issue |
26 |
Pages |
267003 (1 to 5) |
Keywords |
NbN thin films, energy gap |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. |
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Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany |
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0031-9007 |
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PMID:23848912 |
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1370 |
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Semenov, A. D.; Nebosis, R. S.; Gousev, Yu. P.; Heusinger, M. A.; Renk, K. F. |
Title |
Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model |
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Journal Article |
Year |
1995 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
52 |
Issue |
1 |
Pages |
581-590 |
Keywords |
HEB, NbN phonon scecific heat, Cp |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments. |
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903 |
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Author |
Matthias, B. T. |
Title |
Transition temperatures of superconductors |
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Journal Article |
Year |
1953 |
Publication |
Phys. Rev. |
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Phys. Rev. |
Volume |
92 |
Issue |
4 |
Pages |
874-876 |
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Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. |
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RPLAB @ phisix @ |
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987 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
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Journal Article |
Year |
1999 |
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Phys. Rev. B Condens. Matter |
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Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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