Korneev A, Minaeva O, Divochiy A, Antipov A, Kaurova N, Seleznev V, et al. Ultrafast and high quantum efficiency large-area superconducting single-photon detectors. In: Dusek M, Hillery MS, Schleich WP, Prochazka I, Migdall AL, Pauchard A, editors. Proc. SPIE. Vol 6583. Spie; 2007. 65830I (1 to 9).
Abstract: We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped 0.5-mm-long and 100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of 30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
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Gol'tsman G, Minaeva O, Korneev A, Tarkhov M, Rubtsova I, Divochiy A, et al. Middle-infrared to visible-light ultrafast superconducting single-photon detectors. IEEE Trans Appl Supercond. 2007;17(2):246–51.
Abstract: We present an overview of the state-of-the-art of NbN superconducting single-photon detectors (SSPDs). Our devices exhibit quantum efficiency (QE) of up to 30% in near-infrared wavelength and 0.4% at 5 mum, with a dark-count rate that can be as low as 10 -4 s -1 . The SSPD structures integrated with lambda/4 microcavities achieve a QE of 60% at telecommunication, 1550-nm wavelength. We have also developed a new generation of SSPDs that possess the QE of large-active-area devices, but, simultaneously, are characterized by low kinetic inductance that allows achieving short response times and the GHz-counting rate with picosecond timing jitter. The improvements presented in the SSPD development, such as fiber-coupled SSPDs, make our detectors most attractive for high-speed quantum communications and quantum computing.
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Korneev A, Divochiy A, Marsili F, Bitauld D, Fiore A, Seleznev V, et al. Superconducting photon number resolving counter for near infrared applications. In: Tománek P, Senderáková D, Hrabovský M, editors. Proc. SPIE. Vol 7138. Spie; 2008. 713828 (1 to 5).
Abstract: We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.
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Marsili F, Bitauld D, Fiore A, Gaggero A, Leoni R, Mattioli F, et al. Superconducting parallel nanowire detector with photon number resolving functionality. J Modern Opt. 2009;56(2-3):334–44.
Abstract: We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
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Kitaygorsky J, Komissarov I, Jukna A, Sobolewski R, Minaeva O, Kaurova N, et al. Nanosecond, transient resistive state in two-dimensional superconducting stripes [abstract]. In: Proc. APS March Meeting.; 2006. H38.13.
Abstract: We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures.
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