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Author |
Anthore, A.; Pothier, H.; Esteve, D. |
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Title |
Density of states in a superconductor carrying a supercurrent |
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Journal Article |
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Year |
2003 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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90 |
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12 |
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127001 (1 to 4) |
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Keywords |
Usadel, superconducting nanowire |
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Abstract ![sorted by Abstract field, descending order (down)](img/sort_desc.gif) |
We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field. |
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Recommended by Klapwijk |
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924 |
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Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. |
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Title |
Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields |
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Journal Article |
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Year |
2020 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
101 |
Issue |
6 |
Pages |
060508 (1 to 6) |
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MoSi, WSi films |
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Abstract ![sorted by Abstract field, descending order (down)](img/sort_desc.gif) |
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. |
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2469-9950 |
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1800 |
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Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. |
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Title |
Timing jitter in NbN superconducting microstrip single-photon detector |
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Journal Article |
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2020 |
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Phys. Rev. Applied |
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Phys. Rev. Applied |
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14 |
Issue |
4 |
Pages |
044041 (1 to 8) |
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NbN SSPD, SNSPD |
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Abstract ![sorted by Abstract field, descending order (down)](img/sort_desc.gif) |
We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. |
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2331-7019 |
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1788 |
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Author |
Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Sub-shot-noise-limited fiber-optic quantum receiver |
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Journal Article |
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Year |
2020 |
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Phys. Rev. A |
Abbreviated Journal |
Phys. Rev. A |
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101 |
Issue |
3 |
Pages |
032306 (1 to 5) |
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SSPD mixer, SNSPD |
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Abstract ![sorted by Abstract field, descending order (down)](img/sort_desc.gif) |
We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency. |
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2469-9926 |
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1268 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
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Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
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Journal Article |
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Year |
2021 |
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Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
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15 |
Issue |
5 |
Pages |
054014 |
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Keywords |
InOx, Au/Ni, NbN films |
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Abstract ![sorted by Abstract field, descending order (down)](img/sort_desc.gif) |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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1769 |
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