|
Gershenzon EM, Gol'tsman GN, Ptitsyna NG. Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett. 1977;25(12):539–43.
|
|
|
Blagosklonskaya LE, Gershenzon EM, Gol'tsman GN, Elant'ev AI. Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov. 1977;11(12):2373–5.
|
|
|
Gershenzon EM, Gol'tsman G, Ptitsina NG. Energy spectrum of free excitons in germanium. JETP Lett. 1973;18(3):93.
|
|
|
Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
|
|
|
Gershenzon EM, Gol'tsman GN. Transitions of electrons between excited states of donors in germanium. JETP Lett. 1971;14(2):63–5.
|
|