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Gershenzon EM, Gol'tsman GN, Karasik BS, Lugovaya GY, Serebryakova NA, Chinkova EV. Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1992;5(6):1129–40.
Abstract: Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
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Il'in KS, Karasik BS, Ptitsina NG, Sergeev AV, Gol'tsman GN, Gershenzon EM, et al. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity. In: Czech. J. Phys. Vol 46.; 1996. p. 857–8.
Abstract: Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Danerud M, Winkler D, Lindgren M, Zorin M, Trifonov V, Karasik B, et al. A fast infrared detector based on patterned YBCO thin film. Supercond Sci Technol. 1994;7(5):321–3.
Abstract: Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
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Semenov AD, Sergeev AV, Kouminov P, Goghidze IG, Heusinger MA, Nebosis RS, et al. Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements. In: Freyhardt HC, editor. Proc. 1st European Conf. on Appl. Supercond. Vol 2.; 1993. p. 1443–6.
Abstract: Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory.
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Gousev YP, Semenov AD, Gol'tsman GN, Sergeev AV, Gershenzon EM. Electron-phonon interaction in disordered NbN films. Phys B Condens Mat. 1994;194-196:1355–6.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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