| Records |
| Author |
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
| Title |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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Journal Article |
| Year |
1998 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
57 |
Issue |
24 |
Pages |
15623-15628 |
| Keywords |
NbC films |
Abstract  |
A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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0163-1829 |
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1585 |
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Bardeen, J.; Cooper, L. N.; Schrieffer, J. R. |
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Theory of superconductivity |
Type |
Journal Article |
| Year |
1957 |
Publication |
Phys. Rev. |
Abbreviated Journal |
Phys. Rev. |
| Volume |
108 |
Issue |
5 |
Pages |
1175-1204 |
| Keywords |
BCS |
| Abstract |
A theory of superconductivity is presented, based on the fact that the interaction between electrons resulting from virtual exchange of phonons is attractive when the energy difference between the electrons states involved is less than the phonon energy, â„<8f>ω. It is favorable to form a superconducting phase when this attractive interaction dominates the repulsive screened Coulomb interaction. The normal phase is described by the Bloch individual-particle model. The ground state of a superconductor, formed from a linear combination of normal state configurations in which electrons are virtually excited in pairs of opposite spin and momentum, is lower in energy than the normal state by amount proportional to an average (â„<8f>ω)2, consistent with the isotope effect. A mutually orthogonal set of excited states in one-to-one correspondence with those of the normal phase is obtained by specifying occupation of certain Bloch states and by using the rest to form a linear combination of virtual pair configurations. The theory yields a second-order phase transition and a Meissner effect in the form suggested by Pippard. Calculated values of specific heats and penetration depths and their temperature variation are in good agreement with experiment. There is an energy gap for individual-particle excitations which decreases from about 3.5kTc at T=0°K to zero at Tc. Tables of matrix elements of single-particle operators between the excited-state superconducting wave functions, useful for perturbation expansions and calculations of transition probabilities, are given. |
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901 |
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Bulaevskii, L. N.; Graf, M. J.; Batista, C. D.; Kogan, V. G. |
| Title |
Vortex-induced dissipation in narrow current-biased thin-film superconducting strips |
Type |
Journal Article |
| Year |
2011 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
83 |
Issue |
14 |
Pages |
9 |
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| Abstract |
A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot†vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing. |
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SSPD |
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RPLAB @ gujma @ |
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688 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
Type |
Journal Article |
| Year |
1994 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
49 |
Issue |
15 |
Pages |
10484-10494 |
| Keywords |
Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
| Abstract |
Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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Bardeen, J; Mattis, D. C. |
| Title |
Theory of the anomalous skin effect in normal and superconducting metals |
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Journal Article |
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1958 |
Publication |
Phys. Rev. |
Abbreviated Journal |
Phys. Rev. |
| Volume |
111 |
Issue |
2 |
Pages |
412-417 |
| Keywords |
local dirty limit, complex conductivity, HEB |
| Abstract |
Chambers' expression for the current density in a normal metal in which the electric field varies over a mean free path is derived from a quantum approach in which use is made of the density matrix in the presence of scattering centers but in the absence of the field. An approximate expression used for the latter is shown to reduce to one derived by Kohn and Luttinger for the case of weak scattering. A general space-and time-varying electromagnetic interaction is treated by first-order perturbation theory. The method is applied to superconductors, and a general expression derived for the kernel of the Pippard integral for fields of arbitrary frequency. The expressions derived can also be used to discuss absorption of electromagnetic radiation in thin superconducting films. |
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937 |
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