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Author |
Yang, J. K. W.; Kerman, A. J.; Dauler, E. A.; Anant, V.; Rosfjord, K. M.; Berggren, K. K. |
Title |
Modeling the electrical and thermal response of superconducting nanowire single-photon detectors |
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Journal Article |
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
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17 |
Issue |
2 |
Pages |
581 - 585 |
Keywords |
SSPD, modeling |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model. |
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625 |
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Korneeva, Y.; Florya, I.; Semenov, A.; Korneev, A.; Goltsman, G. |
Title |
New generation of nanowire NbN superconducting single-photon detector for mid-infrared |
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Journal Article |
Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
21 |
Issue |
3 |
Pages |
323-326 |
Keywords |
SSPD |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD. |
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RPLAB @ gujma @ |
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644 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
Title |
Ultrafast superconducting single-photon optical detectors and their applications |
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Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
13 |
Issue |
2 |
Pages |
1151-1157 |
Keywords |
NbN SSPD, SNSPD |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Polyakova, M.; Semenov, A. V.; Kovalyuk, V.; Ferrari, S.; Pernice, W. H. P.; Gol'tsman, G. N. |
Title |
Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency |
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Journal Article |
Year |
2019 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
29 |
Issue |
5 |
Pages |
1-5 |
Keywords |
SSPD, waveguide-integrated SNSPD, hot-spot interaction length |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm. |
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1187 |
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Lobanov, Y.; Tong, E.; Blundell, R.; Hedden, A.; Voronov, B.; Gol'tsman, G. |
Title |
Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz |
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Journal Article |
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2011 |
Publication |
IEEE Trans. Appl. Supercond. |
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21 |
Issue |
3 |
Pages |
628-631 |
Keywords |
waveguide NbN HEB mixers |
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We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment. |
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RPLAB @ gujma @ |
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719 |
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