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Kroug M, Yagoubov P, Gol'tsman G, Kollberg E. NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In: Inst. Phys. Conf. Ser. Vol 1. Bristol; 1997. p. 405–8.
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Hoogeveen RWM, Yagoubov PA, de Lange A, Selig AM, Koshelets VP, Ellison B. N., et al. Superconducting integrated receiver development for TELIS. In: Proc. 12th International Symposium on Remote Sensing. Bruges, Belgium; 2005.
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Ekström H, Kroug M, Belitsky V, Kollberg E, Olsson H, Goltsman G, et al. Hot electron mixers for THz applications. In: Rolfe EJ, Pilbratt G, editors. Proc. 30th ESLAB.; 1996. p. 207–10.
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Cherednichenko S, Yagoubov P, Il'in K, Gol'tsman G, Gershenzon E. Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In: Proc. 27th Eur. Microwave Conf. Vol 2. IEEE; 1997. p. 972–7.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Yagoubov P, Hübers H-W, Gol’tsman G, Semenov A, Gao J, Hoogeveen R, et al. Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions. In: Buehler S, Berlin, editors. Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space. Logos-Verlag; 2001. p. 57–69.
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