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Ekström H, Kroug M, Belitsky V, Kollberg E, Olsson H, Goltsman G, et al. Hot electron mixers for THz applications. In: Rolfe EJ, Pilbratt G, editors. Proc. 30th ESLAB.; 1996. p. 207–10.
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Karasik BS, Elantiev AI. Noise temperature limit of a superconducting hot-electron bolometer mixer. Appl Phys Lett. 1996;68(6):853–5.
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Karasik BS, Il'in KS, Pechen EV, Krasnosvobodtsev SI. Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer. Appl Phys Lett. 1996;68(16):2285–7.
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van de Stadt H. An improved 1 THz waveguide mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 536.
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Belitsky VY, Kollberg EL. Tuning circuit for NbN SIS mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 234.
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