|
Author |
Title |
Year |
Publication |
Links |
|
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
|
|
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
|
Mohan, N.; Minaeva, O.; Gol'tsman, G. N.; Nasr, M. B.; Saleh, B. E.; Sergienko, A. V.; Teich, M. C. |
Photon-counting optical coherence-domain reflectometry using superconducting single-photon detectors |
2008 |
Opt. Express |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
1994 |
Council on Low-temp. Phys. |
|