Cherednichenko S, Kroug M, Khosropanah P, Adam A, Merkel H, Kolberg E, et al. A broadband terahertz heterodyne receiver with an NbN HEB mixer. In: Harward University, editor. Proc. 13th Int. Symp. Space Terahertz Technol. Cambridge, MA, USA; 2002. p. 85–95.
Abstract: We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz.
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Shytov AV, Levitov LS, Beenakker CWJ. Electromechanical noise in a diffusive conductor. Phys Rev Lett. 2002;88(22).
Abstract: Electrons moving in a conductor can transfer momentum to the lattice via collisions with impurities and boundaries, giving rise to a fluctuating mechanical stress tensor. The root-mean-squared momentum transfer per scattering event in a disordered metal (of dimension L greater than the mean free path l and screening length xi) is found to be reduced below the Fermi momentum by a factor of order l/L for shear fluctuations and (xi/L)^2 for pressure fluctuations. The excitation of an elastic bending mode by the shear fluctuations is estimated to fall within current experimental sensitivity for a nanomechanical oscillator.
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Ediss GA, Koller D. 68.5 to 118 GHz measurements of possible infrared filter materials: black polyethylene, Zitex, and grooved and un-grooved fluorogold and HDPE.; 2002.
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Norton P. HgCdTe infrared detectors. Opto-Electron Rev. 2002;10(3):159–74.
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Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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