Florya IN, Korneeva YP, Sidorova MV, Golikov AD, Gaiduchenko IA, Fedorov GE, et al. Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In: EPJ Web of Conferences. Vol 103.; 2015. 10004 (1 to 2).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
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Venediktov IO, Elezov MS, Prokhodtsov AI, Kovalyuk VV, An PP, Golikov AD, et al. Study of microheater’s phase modulation for on-chip Kennedy receiver. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012117.
Abstract: In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
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Fedorov GE, Gaiduchenko IA, Golikov AD, Rybin MG, Obraztsova ED, Voronov BM, et al. Response of graphene based gated nanodevices exposed to THz radiation. In: EPJ Web of Conferences. Vol 103.; 2015. 10003 (1 to 2).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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