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Hong K, Marsh PF, Geok-Ing Ng, Pavlidis D, Hong C-H. Optimization of MOVPE grown In
x
Al
1-x
As/In
0.53
Ga
0.47
As planar heteroepitaxial Schottky diodes for terahertz applications. IEEE Trans. Electron Devices. 1994;41(9):1489–97.
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