Akhmadishina KF, Bobrinetskiy II, Komarov IA, Malovichko AM, Nevolin VK, Fedorov GE, et al. Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers. Semicond. 2015;49(13):1749–53.
Abstract: The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
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Blagosklonskaya LE, Gershenzon EM, Gol’tsman GN, Elant’ev AI. Effect of a strong magnetic field on the spectrum of donors in InSb. Sov Phys Semicond. 1978;11(12):1395–7.
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Bondarenko OI, Gershenzon EM, Gurvich YA, Orlova SL, Ptitsina NG. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields. Presumably: Sov Phys Semicond | Физика и техника полупроводников. 1972;6:362–3.
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Fedorov GE, Stepanova TS, Gazaliev AS, Gaiduchenko IA, Kaurova NS, Voronov BM, et al. Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection. Semicond. 2016;50(12):1600–3.
Abstract: Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
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Gerecht E, Musante CF, Yngvesson KS, Waldman J, Gol'tsman GN, Yagoubov PA, et al. Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 47–50.
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