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Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λ_c~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.

Keywords: HgCdTe/CdTe, detector

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	Betz AL, Boreiko RT, Sivananthan S, Ashokan R. HgCdTe photoconductive mixers for 2-8 THz. In: Jet Propulsion Laboratory CIit.u.t.e of T, editor. Proc. 12^th Int. Symp. Space Terahertz Technol. San Diego, CA, USA; 2001. p. 92–101. Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Atom XML MODS XML ODF XML Word XML
	Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series). Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λ_c~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. Keywords: HgCdTe/CdTe, detector Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Atom XML MODS XML ODF XML Word XML