Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Goltsman GN, Verevkin AA, et al. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semicond Sci Technol. 2011;26(2):025013.
Abstract: We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
|
Shangina EL, Smirnov KV, Morozov DV, Kovalyuk VV, Gol’tsman GN, Verevkin AA, et al. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond. 2010;44(11):1427–9.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
|
|
Verevkin AA, Ptitsina NG, Smirnov KV, Gol'tsman GN, Voronov BM, Gershenzon EM, et al. Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 163–6.
|
|
Verevkin AA, Ptitsina NG, Smirnov KV, Goltsman GN, Gershenson EM, Yngvesson KS. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In: Proc. 4-th Int. Semicond. Device Research Symp.; 1997. p. 55–8.
|
Verevkin AA, Ptitsina NG, Smirnov KV, Voronov BM, Gol’tsman GN, Gershenson EM, et al. Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond. 1999;33(5):551–4.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
|
