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Prokhodtsov A, An P, Kovalyuk V, Zubkova E, Golikov A, Korneev A, et al. Optimization of on-chip photonic delay lines for telecom wavelengths. In: J. Phys.: Conf. Ser. Vol 1124.; 2018. 051052.
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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Prokhodtsov A, Golikov A, An P, Kovalyuk V, Goltsman G, Arakelyan S, et al. Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In: EPJ Web Conf. Vol 220.; 2019. 02009.
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
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Prokhodtsov A, Kovalyuk V, An P, Golikov A, Shakhovoy R, Sharoglazova V, et al. Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012118.
Abstract: In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
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Risacher C, Meledin D, Belitsky V, Bergman P. First 1.3 THz observations at the APEX telescope. In: Proc. 20th Int. Symp. Space Terahertz Technol.; 2009. p. 54–61.
Abstract: The Atacama Pathfinder EXperiment (APEX) 12m telescope is operating on the Llano Chajnantor, Chile, since 2003 and a set of state of the art sub-millimeter receivers have been installed for frequencies spanning from 150 GHz to 1500 GHz. In 2008, a balanced 1.3 THz Hot Electron Bolometer (HEB) receiver was installed for the atmospheric window 1250-1380 GHz. This instrument is part of a 4-channel receiver cryostat with the other channels being 211-275 GHz, 275-370 GHz and 380-500 GHz Sideband Separating (SSB) SIS receivers. This paper presents the first observations obtained so far with the 1.3 THz band during its first months of operation. The sky measurements were taken during opportunistic commissioning and science verification phases, when the weather conditions were sufficiently good with a Precipitable Water Vapor (PWV) below 0.25 mm, which was the case only a few nights during these months. We present the first observations of the molecular transition CO J=(11-10) line on different sources such as Orion-FIR4, CW-Leo and SgrB2(M). We describe the many challenges and difficulties encountered for achieving successful THz observations from a large sub-millimeter ground-based telescope.
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Venediktov IO, Elezov MS, Prokhodtsov AI, Kovalyuk VV, An PP, Golikov AD, et al. Study of microheater’s phase modulation for on-chip Kennedy receiver. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012117.
Abstract: In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
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