Cao Q, Yoon SF, Tong CZ, Ngo CY, Liu CY, Wang R, et al. Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers. Appl Phys Lett. 2009;95(19):3.
Abstract: The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Dorenbos SN, Reiger EM, Perinetti U, Zwiller V, Zijlstra T, Klapwijk TM. Low noise superconducting single photon detectors on silicon. Appl Phys Lett. 2008;93(13):131101.
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Floet DW, Baselmans JJA, Klapwijk TM, Gao JR. Resistive transition of niobium superconducting hot-electron bolometer mixers. Appl Phys Lett. 1998;73(19):2826.
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Fu K, Zannoni R, Chan C, Adams SH, Nicholson J, Polizzi E, et al. Terahertz detection in single wall carbon nanotubes. Appl Phys Lett. 2008;92(3):033105.
Abstract: It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K.
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Gaggero A, Nejad SJ, Marsili F, Mattioli F, Leoni R, Bitauld D, et al. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl Phys Lett. 2010;97(15):3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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