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Ekström H, Kroug M, Belitsky V, Kollberg E, Olsson H, Goltsman G, et al. Hot electron mixers for THz applications. In: Rolfe EJ, Pilbratt G, editors. Proc. 30th ESLAB.; 1996. p. 207–10.
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Elantev AI, Karasik BS. Noise temperature of a superconducting hot-electron mixer. In: Proc. 5th Int. Symp. Space Terahertz Technol.; 1994. 225.
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Finkel M, Vachtomin Y, Antipov S, Drakinski V, Kaurova N, Voronov B, et al. Gain bandwidth and noise temperature of NbTiN HEB mixer. In: Proc. 14th Int. Symp. Space Terahertz Technol.; 2003. p. 276–85.
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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Finkel MI, Maslennikov SN, Vachtomin YB, Svechnikov SI, Smirnov KV, Seleznev VA, et al. Hot electron bolometer mixer for 20 – 40 THz frequency range. In: Proc. 16th Int. Symp. Space Terahertz Technol. Göteborg, Sweden; 2005. p. 393–7.
Abstract: The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
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Gao JR, Hajenius M, Baselmans JJA, Klapwijk TM, de Korte PAJ, Voronov B, et al. NbN hot electron bolometer mixers with superior performance for space applications. In: Armandillo E, Leone B, editors. Proc. Int. workshop on low temp. electronics. Noordwijk; 2004. p. 11–7.
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