Gousev YP, Semenov AD, Goghidze IG, Pechen EV, Varlashkin AV, Gol'tsman GN, et al. Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer. IEEE Trans Appl Supercond. 1997;7(2):3556–9.
Abstract: We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
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Gousev YP, Olsson HK, Gol'tsman GN, Voronov BM, Gershenzon EM. NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. In: Proc. 9th Int. Symp. Space Terahertz Technol.; 1998. p. 121–9.
Abstract: We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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Hajenius M, Barends R, Gao JR, Klapwijk TM, Baselmans JJA, Baryshev A, et al. Local resistivity and the current-voltage characteristics of hot electron bolometer mixers. IEEE Trans Appl Supercond. 2005;15(2):495–8.
Abstract: Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Hajenius M, Baselmans JJA, Gao JR, Klapwijk TM, de Korte 2 PAJ, Voronov B, et al. Increased bandwidth of NbN phonon cooled hot electron bolometer mixers. In: Proc. 15th Int. Symp. Space Terahertz Technol.; 2004. p. 381–6.
Abstract: We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Hajenius M, Baselmans JJA, Gao JR, Klapwijk TM, de Korte PAJ, Voronov B, et al. Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz. Supercond Sci Technol. 2004;17(5):S224–S228.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
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