Kahl O, Ferrari S, Kovalyuk V, Vetter A, Lewes-Malandrakis G, Nebel C, et al. Spectrally resolved single-photon imaging with hybrid superconducting – nanophotonic circuits [Internet].; 2016 [cited 2024 Jul 6].arXiv:1609.07857v1 [physics.ins-det]
Abstract: The detection of individual photons is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multi-color imaging techniques, such as single photon spectroscopy, fluorescence resonance energy transfer microscopy and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz. We demonstrate multi-detector devices for telecommunication and visible wavelengths and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting-nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength division multiplexing on a chip.
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Kardakova A, Shishkin A, Semenov A, Goltsman GN, Ryabchun S, Klapwijk TM, et al. Relaxation of the resistive superconducting state in boron-doped diamond films. Phys Rev B. 2016;93(6):064506.
Abstract: We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Khasminskaya S, Pyatkov F, Słowik K, Ferrari S, Kahl O, Kovalyuk V, et al. Fully integrated quantum photonic circuit with an electrically driven light source. Nat Photon. 2016;10(11):727–32.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Korneeva Y, Sidorova M, Semenov A, Krasnosvobodtsev S, Mitsen K, Korneev A, et al. Comparison of hot-spot formation in NbC and NbN single-photon detectors. IEEE Trans Appl Supercond. 2016;26(3):1–4.
Abstract: We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN.
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Krause S, Mityashkin V, Antipov S, Gol'tsman G, Meledin D, Desmaris V, et al. Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In: Proc. 27th Int. Symp. Space Terahertz Technol.; 2016. p. 30–2.
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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