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Jackson BD, Hesper R, Adema J, Barkhof J, Baryshev AM, Zijlstra T, et al. Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA. In: Proc. 20th Int. Symp. Space Terahertz Technol.; 2009. p. 7–11.
Abstract: The Atacama Large Millimeter/Sub-millimeter Array (ALMA) requires the development and production of 73 state-of-the-art receivers for the 602-720 GHz range – the ALMA Band 9 cartridges. Development and pre-production of the first 8 cartridges was completed between 2003 and 2008, resulting in a cartridge design that meets the project's challenging requirements. The cartridge design remains essentially unchanged for production, while the production and test processes developed during pre-production have been fine-tuned to address the biggest new challenge for this phase – ramping up production to a rate of 2 cartridges per month over 2009-2012.
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Jackson BD, Baryshev AM, de Lange G, Gao JR, Shitov SV, Iosad NN, et al. Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit. Appl. Phys. Lett.. 2001;79(3):436.
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Heslinga DR, Shafranjuk SE, van Kempen H, Klapwijk TM. Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy. Phys Rev B. 1994;49(15):10484–94.
Abstract: Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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Hajenius M, Yang ZQ, Gao JR, Baselmans JJA, Klapwijk TM, Voronov B, et al. Optimized sensitivity of NbN hot electron bolometer mixers by annealing. IEEE Trans Appl Supercond. 2007;17(2):399–402.
Abstract: We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K.
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Hajenius M, Baselmans JJA, Gao JR, Klapwijk TM, de Korte PAJ, Voronov B, et al. Improved NbN phonon cooled hot electron bolometer mixers. In: Proc. 14th Int. Symp. Space Terahertz Technol. Tucson, USA; 2003. p. 413–23.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
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