Records |
Author |
Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. |
Title |
Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer |
Type |
Journal Article |
Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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Volume |
100 |
Issue |
7 |
Pages |
074507 |
Keywords |
HEB |
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0021-8979 |
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Call Number |
RPLAB @ s @ |
Serial |
385 |
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Author |
Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue |
2 |
Pages |
495-498 |
Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
Abstract |
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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Serial |
980 |
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Author |
Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. |
Title |
Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer |
Type |
Journal Article |
Year |
2005 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
86 |
Issue |
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Pages |
244104 (1 to 3) |
Keywords |
HEB, QCL |
Abstract |
We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability. |
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no |
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Serial |
905 |
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Author |
Gao, J. R.; Hajenius, M.; Yang, Z. Q.; Baselmans, J. J. A.; Khosropanah, P.; Barends, R.; Klapwijk, T. M. |
Title |
Terahertz superconducting hot electron bolometer heterodyne receivers |
Type |
Journal Article |
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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Volume |
17 |
Issue |
2 |
Pages |
252-258 |
Keywords |
HEB, mixer, direct detection effect |
Abstract |
We highlight the progress on NbN hot electron bolometer (HEB) mixers achieved through fruitful collaboration between SRON Netherlands Institute for Space Research and Delft University of Technology, the Netherlands. This includes the best receiver noise temperatures of 700 K at 1.63 THz using a twin-slot antenna mixer and 1050 K at 2.84 THz using a spiral antenna coupled HEB mixer. The mixers are based on thin NbN films on Si and fabricated with a new contact-process and-structure. By reducing their areas HEB mixers have shown an LO power requirement as low as 30 nW. Those small HEB mixers have demonstrated equivalent sensitivity as those with large areas provided the direct detection effect due to broadband radiation is removed. To manifest that a HEB based heterodyne receiver can in practice be used at arbitrary frequencies above 2 THz, we demonstrate a 2.8 THz receiver using a THz quantum cascade laser (QCL) as local oscillator. |
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1051-8223 |
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no |
Call Number |
RPLAB @ asmirn @ |
Serial |
557 |
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Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
187-189 |
Keywords |
NbN HEB mixers |
Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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