Il’in KS, Ptitsina NG, Sergeev AV, Gol’tsman GN, Gershenzon EM, Karasik BS, et al. Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys Rev B. 1998;57(24):15623–8.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Huard B, Pothier H, Esteve D, Nagaev KE. Electron heating in metallic resistors at sub-Kelvin temperature. Phys Rev B. 2007;76:165426(1–9).
Abstract: In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.
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Heslinga DR, Shafranjuk SE, van Kempen H, Klapwijk TM. Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy. Phys Rev B. 1994;49(15):10484–94.
Abstract: Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.
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Cooper LN. Bound electron pairs in a degenerate fermi gas. Phys Rev. 1956;104(4):1189–90.
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Ciulin V, Carter SG, Sherwin MS. Terahertz optical mixing in biased GaAs single quantum wells. Phys Rev B. 2004;70(11):115312–(1.
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