Henrich D, Dorner S, Hofherr M, Il'in K, Semenov A, Heintze E, et al. Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content. J Appl Phys. 2012;112.
Abstract: The spectral detection efficiency and the dark count rate of superconducting nanowire
single-photon detectors (SNSPD) have been studied systematically on detectors made from thin
NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm
thick NbN films results in a decrease of the dark count rates more than two orders of magnitude
and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed
phenomena are explained by an improvement of uniformity of NbN films that has been confirmed
by a decrease of resistivity and an increase of the ratio of the measured critical current to the
depairing current. The latter factor is considered as the most crucial for both the cut-off
wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria
for material properties to optimize SNSPD in the infrared spectral region. VC 2012 American
Institute of Physics. [http://dx.doi.org/10.1063/1.4757625]
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He R, Sazio PJA, Peacock AC, Healy N, Sparks JR, Krishnamurthi M, et al. Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres. Nat Photon. 2012;6(3):174–9.
Abstract: The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.
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Hase M, Katsuragawa M, Constantinescu AM, Petek H. Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon. Nat Photon. 2012;6:243–247.
Abstract: High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency.
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Gustafsson MV, Santos PV, Johansson G, Delsing P. Local probing of propagating acoustic waves in a gigahertz echo chamber. Nat Phys. 2012;8(4):338–43.
Abstract: In the same way that micro-mechanical resonators resemble guitar strings and drums, surface acoustic waves resemble the sound these instruments produce, but moving over a solid surface rather than through air. In contrast with oscillations in suspended resonators, such propagating mechanical waves have not before been studied near the quantum mechanical limits. Here, we demonstrate local probing of surface acoustic waves with a displacement sensitivity of 30amRMSHz-1/2 and detection sensitivity on the single-phonon level after averaging, at a frequency of 932MHz. Our probe is a piezoelectrically coupled single-electron transistor, which is sufficiently fast, non-destructive and localized to enable us to track pulses echoing back and forth in a long acoustic cavity, self-interfering and ringing the cavity up and down. We project that strong coupling to quantum circuits will enable new experiments, and hybrids using the unique features of surface acoustic waves. Prospects include quantum investigations of phonon-phonon interactions, and acoustic coupling to superconducting qubits for which we present favourable estimates.
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Grotz B, Hauf MV, Dankerl M, Naydenov B, Pezzagna S, Meijer J, et al. Charge state manipulation of qubits in diamond. Nat Comm. 2012;3(729):6.
Abstract: The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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