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Goulielmakis, Eleftherios |
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Attosecond photonics: Extreme ultraviolet catastrophes |
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2012 |
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Nature Photonics |
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Nat. Photon. |
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6 |
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3 |
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142-143 |
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fromIPMRAS |
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Extreme ultraviolet attosecond pulses, which emerge from the interaction of atoms with intense laser fields, play a central role in modern ultrafast science and the exploration of electron behaviour. Recent work now shows that catastrophe theory can help optimize the properties of these pulses. |
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791 |
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Usmani, Imam; Clausen, Christoph; Bussières, Félix; Sangouard, Nicolas; Afzelius, Mikael; Gisin, Nicolas |
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Heralded quantum entanglement between two crystals |
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Journal Article |
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2012 |
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Nature Photonics |
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Nat. Photon. |
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6 |
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4 |
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234-237 |
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fromIPMRAS |
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Quantum networks must have the crucial ability to entangle quantum nodes. A prominent example is the quantum repeater, which allows the distance barrier of direct transmission of single photons to be overcome, provided remote quantum memories can be entangled in a heralded fashion. Here, we report the observation of heralded entanglement between two ensembles of rare-earth ions doped into separate crystals. A heralded single photon is sent through a 50/50 beamsplitter, creating a single-photon entangled state delocalized between two spatial modes. The quantum state of each mode is subsequently mapped onto a crystal, leading to an entangled state consisting of a single collective excitation delocalized between two crystals. This entanglement is revealed by mapping it back to optical modes and by estimating the concurrence of the retrieved light state. Our results highlight the potential of crystals doped with rare-earth ions for entangled quantum nodes and bring quantum networks based on solid-state resources one step closer. |
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793 |
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Hase, Muneaki; Katsuragawa, Masayuki; Constantinescu, Anca Monia; Petek, Hrvoje |
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Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon |
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2012 |
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Nature Photonics |
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Nat. Photon. |
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6 |
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243–247 |
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High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency. |
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RPLAB @ gujma @ |
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794 |
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Takesue, Hiroki; Nam, Sae Woo; Zhang, Qiang; Hadfield, Robert H.; Honjo, Toshimori; Tamaki, Kiyoshi; Yamamoto, Yoshihisa |
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Quantum key distribution over a 40-dB channel loss using superconducting single-photon detectors |
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2007 |
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Nature Photonics |
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Nat. Photon. |
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1 |
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343-348 |
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quantum cryptography, SSPD, QKD, DSP |
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RPLAB @ akorneev @ |
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609 |
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Kawano, Yukio; Ishibashi, Koji |
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An on-chip near-field terahertz probe and detector |
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2008 |
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Nature Photonics |
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Nature Photon |
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2 |
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10 |
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618-621 |
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single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
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The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
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1749-4885 |
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570 |
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