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Chavarr'ıa, L.; Herpin, F.; Jacq, T.; Braine, J.; Bontemps, S.; Baudry, A.; Marseille, M.; van der Tak, F.; Pietropaoli, B.; Wyrowski, F.; Shipman, R.; Frieswijk, W.; van Dishoeck, E. F.; Cernicharo, J.; Bachiller, R.; Benedettini, M.; Benz, A. O.; Bergin, E.; Bjerkeli, P.; Blake, G. A.; Bruderer, S.; Caselli, P.; Codella, C.; Daniel, F.; di Giorgio, A. M.; Dominik, C.; Doty, S. D.; Encrenaz, P.; Fich, M.; Fuente, A.; Giannini, T.; Goicoechea, J. R.; de Graauw, T.; Hartogh, P.; Helmich, F.; Herczeg, G. J.; Hogerheijde, M. R.; Johnstone, D.; Jørgensen, J. K.; Kristensen, L. E.; Larsson, B.; Lis, D.; Liseau, R.; McCoey, C.; Melnick, G.; Nisini, B.; Olberg, M.; Parise, B.; Pearson, J. C.; Plume, R.; Risacher, C.; Santiago-Garc'ıa, J.; Saraceno, P.; Stutzki, J.; Szczerba, R.; Tafalla, M.; Tielens, A.; van Kempen, T. A.; Visser, R.; Wampfler, S. F.; Willem, J.; Yıldız, U. A. |
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Water in massive star-forming regions: HIFI observations of W3 IRS5 |
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Journal Article |
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2010 |
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Astron. Astrophys. |
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521 |
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L37 (1 to 5) |
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HEB mixer applications, HIFI, Herschel, stars: formation, stars: massive, ISM: molecules, ISM: abundances, dust, extinction, radio lines: ISM |
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We present Herschel observations of the water molecule in the massive star-forming region W3 IRS5. The o-H217O 110-101, p-H218O 111-000, p-H2O 202-111, p-H2O 111-000, o-H2O 221-212, and o-H2O 212-101 lines, covering a frequency range from 552 up to 1669 GHz, have been detected at high spectral resolution with HIFI. The water lines in W3 IRS5 show well-defined high-velocity wings that indicate a clear contribution by outflows. Moreover, the systematically blue-shifted absorption in the H2O lines suggests expansion, presumably driven by the outflow. No infall signatures are detected. The p-H2O 111-000 and o-H2O 212-101 lines show absorption from the cold material (T ~ 10 K) in which the high-mass protostellar envelope is embedded. One-dimensional radiative transfer models are used to estimate water abundances and to further study the kinematics of the region. We show that the emission in the rare isotopologues comes directly from the inner parts of the envelope (T â‰<b3> 100 K) where water ices in the dust mantles evaporate and the gas-phase abundance increases. The resulting jump in the water abundance (with a constant inner abundance of 10-4) is needed to reproduce the o-H217O 110-101 and p-H218O 111-000 spectra in our models. We estimate water abundances of 10-8 to 10-9 in the outer parts of the envelope (T â‰<b2> 100 K). The possibility of two protostellar objects contributing to the emission is discussed. |
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Chav13HEBapplHIFIb |
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1086 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
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2019 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
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7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Paveliev, D. G. |
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Heterodyne source of THz range based on semiconductor superlattice multiplier |
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Conference Article |
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2011 |
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IRMMW-THz |
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IRMMW-THz |
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1-2 |
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NbN HEB mixer, superlattice |
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We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state. |
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6105209 |
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1384 |
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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
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Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
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2006 |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
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686-687 |
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IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
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An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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472-475 |
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waveguide NbN HEB mixers |
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We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. |
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1464 |
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