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Belitsky VY, Kollberg EL. Tuning circuit for NbN SIS mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 234.
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Yagubov P, Gol'tsman G, Voronov B, Seidman L, Siomash V, Cherednichenko S, et al. The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. p. 290–302.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Ellison BN, Maddison BJ, Matheson DN, Oldfield ML, Marazita S, Crowe TW, et al. First results for a 2.5 THz Schottky diode waveguide mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 494.
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Betz AL, Borejko RT. A practical Schottky mixer for 5 THz. In: Proc. 7th Int. Symp. Space Terahertz Technol.; 1996. 503.
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Carlstrom JE, Jonas Zmuidzinas. Millimeter and Submillimeter Techniques. New York: Oxford University Press Inc; 1996. 848. (Review of radio science 1993–1996; no 34).
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