Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
57 |
369-376 |
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |