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Shurakov A, Mikhalev P, Mikhailov D, Mityashkin V, Tretyakov I, Kardakova A, et al. Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering. 2018;195:26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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Shurakov A, Lobanov Y, Goltsman G. Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications. Supercond Sci Technol. 2015;29(2):023001.
Abstract: The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials.
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Shurakov A, Seliverstov S, Kaurova N, Finkel M, Voronov B, Goltsman G. Input bandwidth of hot electron bolometer with spiral antenna. IEEE Trans THz Sci Technol. 2012;2(4):400–5.
Abstract: We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
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Tong C-YE, Trifonov A, Shurakov A, Blundell R, Gol’tsman G. A microwave-operated hot-electron-bolometric power detector for terahertz radiation. IEEE Trans Appl Supercond. 2015;25(3):2300604 (1 to 4).
Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.
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Shurakov A, Tong C-YE, Blundell R, Kaurova N, Voronov B, Gol'tsman G. Microwave stabilization of a HEB mixer in a pulse-tube cryocooler. IEEE Trans Appl Supercond. 2013;23(3):1501504.
Abstract: We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured.
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