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Gershenzon EM, Gol'tsman GN, Gogidze IG, Gusev YP, Elantiev AI, Karasik BS, et al. Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state. Sov Supercond. 1990;3(10):1582–97.
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Gol'tsman GN, Semenov AD, Gousev YP, Zorin MA, Gogidze IG, Gershenzon EM, et al. Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light. Supercond Sci Technol. 1991;4(9):453–6.
Abstract: The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
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Men’shchikov EM, Gogidze IG, Sergeev AV, Elant’ev AI, Kuminov PB, Gol’tsman GN, et al. Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride. Tech Phys Lett. 1997;23(6):486–8.
Abstract: A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K.
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Gol’tsman GN, Semenov AD, Sergeev AV, Aksaev EE, Gogidze IG, Gershenzon EM. Electron-phonon interaction in thin YBaCuO films and fast detectors. In: Meissner M, Pohl RO, editors. Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences. Vol 112.; 1993. p. 184–5.
Abstract: The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Sergeev AV, Aksaev EE, Gogidze IG, Gol’tsman GN, Semenov AD, Gershenzon EM. Thermal boundary resistance at YBaCuO film-substrate interface. In: Meissner M, Pohl RO, editors. Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences. Vol 112.; 1993. p. 405–6.
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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