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Author Title Year Publication DOI (up)
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range 1997 Proc. 4-th Int. Semicond. Device Research Symp.
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure 1997 Proc. 4-th Int. Semicond. Device Research Symp.
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions 1996 Surface Science 10.1016/0039-6028(96)00471-2
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. Ultimate quantum efficiency of a superconducting hot-electron photodetector 1998 Appl. Phys. Lett. 10.1063/1.122942
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements 2011 Semicond. Sci. Technol. 10.1088/0268-1242/26/2/025013