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Amato MJ, Benford DJ, Moseley HS, Juan Roman. An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR). In: Proc. SPIE. Vol 4850.; 2003. p. 1120–31.
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Yorke HW, Paine CG, Bradford CM, Mark Dragovan, Nash AE, Dooley JA, et al. Thermal design trades for SAFIR architecture concepts. In: Proc. SPIE. Vol 5487.; 2004. p. 1617–24.
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Alexandre Karpov, David Miller, Rice FR, Stern JA, Bruce Bumble, LeDuc HG, et al. Low-noise SIS mixer for far-infrared radio astronomy. In: Proc. SPIE. Vol 5498. Glasgow, Scotland, UK; 2004. p. 616–21.
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Zhou YD, Becker CR, Ashokan R, Selamet Y, Chang Y, Boreiko RT, et al. Progress in far-infrared detection technology. In: Proc. SPIE. Vol 4795.; 2002. p. 121–8. (Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series).
Abstract: II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.
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Cherednichenko S, Drakinskiy V, Baubert J, Lecomte B, Dauplay F, Krieg JM, et al. 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In: Proc. SPIE. Vol 6275.; 2006. 62750I (1 to 11).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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