Fetterman HR, Tannenwald PE, Clifton BJ, Parker CD, Fitzgerald WD, Erickson NR. Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers. Appl Phys Lett. 1978;33(2):151–4.
Abstract: Frequency countings close to a phase locked zone in an electronic receiver show a 1/f power spectral density. The noise scaling versus the frequency deviation and the open loop gain are found from Adler's model of the phase locked loop. This fully agrees with experiments performed at 5 MHz on a receiver with a Schottky diode mixer and a low pass filter. The 1/f amplitude and frequency noise due to the whole set of (sub)harmonics is explained from a nonlinear mapping, with a coupling coefficient related to the structure of prime numbers.
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Treuttel J, Thomas B, Maestrini A, Wang H, Alderman B, Siles JV, et al. A 380 GHz sub-harmonic mixer using MMIC foundry based Schottky diodes transferred onto quartz substrate. In: Proc. 20th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 2009.
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Tol J van, Brunel L-C, Wylde RJ. A quasioptical transient electron spin resonance spectrometer operating at 120 and 240 GHz. Rev Sci Instrum. 2005;76(7):074101 (1 to 8).
Abstract: A new multifrequency quasioptical electron paramagnetic resonance (EPR) spectrometer is described. The superheterodyne design with Schottky diode mixer/detectors enables fast detection with subnanosecond time resolution. Optical access makes it suitable for transient EPR (TR-EPR) at 120 and 240 GHz. These high frequencies allow for an accurate determination of small g-tensor anisotropies as are encountered in excited triplet states of organic molecules like porphyrins and fullerenes. The measured concentration sensitivity for continuous-wave (cw) EPR at 240 GHz and at room temperature without cavity is 1013 spins/cm3 (15 nM) for a 1 mT linewidth and a 1 Hz bandwidth. With a Fabry-Perot cavity and a sample volume of 30 nl, the sensitivity at 240 GHz corresponds to [approximate]3×109 spins for a 1 mT linewidth. The spectrometer's performance is illustrated with applications of transient EPR of excited triplet states of organic molecules, as well as cw EPR of nitroxide reference systems and a thin film of a colossal magnetoresistance material.
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Archer JW. Multiple mixer, cryogenic receiver for 200-350 GHz. Rev Sci Instrum. 1983;54(10):1371–6.
Abstract: This paper describes a new 200–350-GHz dual polarization heterodyne radiometer receiver for radio astronomy applications. The receiver incorporates four pairs of cryogenically cooled Schottky-barrier diode single-ended mixers, each pair covering a 30–40-GHz subband of the full operating band. Each mixer, with its IF amplifier, is mounted in an individual cryogenic subdewar comprising a separate vcuum chamber and a cold stage, which may be readily thermally connected to or disconnected from the main refrigerator by a novel mechanical heat switch. A dual polarization LO diplexer is mounted on a rotary table above the subdewars. For band selection, the two diplexer rf output ports may be positioned over any of the four pairs of subdewars. The SSB receiver noise temperatues achieved are less than 500 K between 200 and 240 GHz, less than 800 K between 245 and 275 GHz and 1500 K at 345 GHz.
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Shurakov A, Mikhailov D, Belikov I, Kaurova N, Zilberley T, Prikhodko A, et al. Planar Schottky diode with a Γ-shaped anode suspended bridge. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012154.
Abstract: In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
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