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Cherednichenko S, Ronnung F, Gol'tsman G, Gershenzon E, Winkler D. YBa2Cu3O7-δ hot-electron bolometer with submicron dimensions. In: Proc. 10th Int. Symp. Space Terahertz Technol.; 1999. p. 181–9.
Abstract: Photoresponse of YBa2Cu3O7-δ hot-electron bolometers to modulated near-infrared radiation was studied at a modulation .frequenc y var y ing from 0.2 MHz to 2 GHz. Bolometers were _fabricated from a 50 12 M thick film and had in-plane areas of 10x10 , um 2 . 2x0.2 s um', 1x0.2 p.m', and 0.5x0.2 jim. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.
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Danerud M, Winkler D, Zorin M, Trifonov V, Karasik B, Gershenzon EM, et al. Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films. In: Birch JR, Parker TJ, editors. Proc. SPIE. Vol 2104. Spie; 1993. p. 183–4.
Abstract: Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W.
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Gershenzon EM, Gol'tsman GN, Mel'nikov AP. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett. 1971;14(5):185–6.
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Gao JR, Hajenius M, Tichelaar FD, Voronov B, Grishina E, Klapwijk TM, et al. Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In: Proc. 17th Int. Symp. Space Terahertz Technol.; 2006. p. 187–9.
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Schubert J, Semenov A, Gol'tsman G, Hübers H-W, Schwaab G, Voronov B, et al. Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz. In: Proc. 10th Int. Symp. Space Terahertz Technol.; 1999. p. 190–9.
Abstract: We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.
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