Records |
Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
High speed hot-electron superconducting bolometer |
Type |
Conference Article |
Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
2104 |
Issue |
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Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
181-182 |
Keywords |
NbN HEb, Nb, Al |
Abstract |
Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Editor |
Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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Call Number |
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Serial |
1652 |
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Author |
Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
Type |
Conference Article |
Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
2104 |
Issue |
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Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
183-184 |
Keywords |
YBCO HTS HEB detectors |
Abstract |
Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Editor |
Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
Notes |
https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
Approved |
no |
Call Number |
10.1117/12.2298489 |
Serial |
1653 |
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Author |
Semenov, A.; Richter, H.; Smirnov, A.; Günther, B.; Hübers, H.-W.; Il’in, K.; Siegel, M.; Gol’tsman, G.; Drakinskiy, V.; Merkel, H.; Karamarkovic, J. |
Title |
Development of HEB mixers for GREAT and for security screening |
Type |
Abstract |
Year |
2007 |
Publication |
Proc. 18th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 18th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
184 |
Keywords |
NbN HEB mixers, GREAT |
Abstract |
We report the study on the quasioptical coupling efficiency and the gain bandwidth of NbN hot-electron bolometer mixers developed for the 4.7 THz channel of the German receiver for Astronomy at THz-frequencies (GREAT) and for security screening at subterahertz frequencies. Radiation coupling efficiency and directive properties of integrated lens antennas with log-spiral, log-periodic and double-slot planar feeds coupled to a hot-electron bolometer were experimentally studied at frequencies from 1 THz to 6 THz and compared with simulations based on the method of moments and the physical-optics ray tracing. For all studied antennas the modeled spectral dependence of the coupling efficiency fits to the experimental data obtained with both Fourier transform spectroscopy and noise temperature measurements only if the complex impedance of the bolometer is explicitly taken into account. Our experimental data did not indicate any noticeable contribution of the quantum noise to the system noise temperature. The experimentally observed deviation of the beam pattern from the model prediction increases with frequency and is most likely due to a non- ideality of the presently used lenses. Study of the intermediate frequency mixer gain at local oscillator (LO) frequencies between 2.5 THz and 0.3 THz showed an increase of the gain bandwidth at low LO frequencies that was understood as the contribution of the direct interaction of magnetic vortices with the radiation field. We have found that the non- homogeneous hot-spot model more adequately describes variation of the intermediate frequency bandwidth with the applied local oscillator power than any of uniform mixer models. The state-of-the-day performance of the GREAT 4.7-THz channel and the 0.8-THz security scanner will be presented. |
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no |
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Serial |
1420 |
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Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
187-189 |
Keywords |
NbN HEB mixers |
Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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no |
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Serial |
1439 |
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Author |
Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
Title |
Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
Type |
Conference Article |
Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages ![sorted by First Page field, ascending order (up)](img/sort_asc.gif) |
190-199 |
Keywords |
NbN HEB mixers |
Abstract |
We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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1573 |
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