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Hesler JL, Hall WR, Crowe TW, Weikle RM, Bradley RF, Pan S-K. Submm wavelenght waveguide mixers using planar Schottky barier diods. In: Proc. 7th Int. Symp. Space Terahertz Technol.; 1996. 462.
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Ellison BN, Maddison BJ, Matheson DN, Oldfield ML, Marazita S, Crowe TW, et al. First results for a 2.5 THz Schottky diode waveguide mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 494.
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Betz AL, Borejko RT. A practical Schottky mixer for 5 THz. In: Proc. 7th Int. Symp. Space Terahertz Technol.; 1996. 503.
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van de Stadt H. An improved 1 THz waveguide mixer. In: Proc. 7th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia, USA; 1996. 536.
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Verevkin AA, Ptitsina NG, Chulcova GM, Gol'tsman GN, Gershenzon EM, Yngvesson KS. Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science. 1996;361-362:569–73.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
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