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Gershenzon EM, Gol'tsman GN, Zorin MA, Karasik BS, Trifonov VA. Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation. In: Council on Low-temp. Phys.; 1994. p. 82–3.
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Gol’tsman GN, Kouminov PB, Goghidze IG, Karasik BS, Gershenzon EM. Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states. In: Nahum M, Villegier J-C, editors. Proc. SPIE. Vol 2159. SPIE; 1994. p. 81–6.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
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Karasik BS, Zorin MA, Milostnaya II, Elantev AI, Gol’tsman GN, Gershenzon EM. Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films. In: Buhrman RA, Clarke JT, Daly K, Koch RH, Luine JA, Simon RW, editors. Proc. SPIE. Vol 2160. SPIE; 1994. p. 74–82.
Abstract: We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Karasik BS, Il'in KS, Ptitsina NG, Gol'tsman GN, Gershenzon EM, Pechen' EV, et al. Electron-phonon scattering rate in impure NbC films [abstract]. In: NASA/ADS.; 1998. Y35.08.
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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