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Anthore, A.; Pothier, H.; Esteve, D. |
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Title |
Density of states in a superconductor carrying a supercurrent |
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Journal Article |
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2003 |
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Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
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Volume |
90 |
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12 |
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127001 (1 to 4) |
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Keywords |
Usadel, superconducting nanowire |
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We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field. |
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Recommended by Klapwijk |
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924 |
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Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
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Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
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Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
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13 |
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132508 (1 to 4) |
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Keywords |
NbN SSPD, SNSPD |
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We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D. |
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Title |
Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux |
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Journal Article |
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Year |
2018 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
98 |
Issue |
13 |
Pages |
134504 (1 to 14) |
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Keywords |
SNSPD, NbN namowires |
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We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field. |
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2469-9950 |
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1842 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
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Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
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Journal Article |
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Year |
2007 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
76 |
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165426(1-9) |
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Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N. |
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Title |
Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films |
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Journal Article |
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Year |
2018 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
97 |
Issue |
18 |
Pages |
184512 (1 to 13) |
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Keywords |
WSi films, diffusion constant, SSPD, SNSPD |
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We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques. |
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1305 |
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