Svechnikov SI, Finkel MI, Maslennikov SN, Vachtomin YB, Smirnov KV, Seleznev VA, et al. Superconducting hot electron bolometer mixer for middle IR range. In: Proc. 16th Int. Crimean Microwave and Telecommunication Technology. Vol 2.; 2006. p. 686–7.
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Vakhtomin YB, Finkel MI, Antipov SV, Smirnov KV, Kaurova NS, Drakinskii VN, et al. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J of communications technol & electronics. 2003;48(6):671–5.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Tretyakov IV, Finkel MI, Ryabchun SA, Kardakova AI, Seliverstov SV, Petrenko DV, et al. Hot-electron bolometer mixers with in situ contacts. Radiophys Quant Electron. 2014;56(8-9):591–8.
Abstract: We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer.
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Ryabchun SA, Tretyakov IV, Pentin IV, Kaurova NS, Seleznev VA, Voronov BM, et al. Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys. Quant. Electron.. 2009;52(8):576–82.
Abstract: We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
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Smirnov AV, Baryshev AM, de Bernardis P, Vdovin VF, Gol'tsman GN, Kardashev NS, et al. The current stage of development of the receiving complex of the millimetron space observatory. Radiophys Quant Electron. 2012;54(8):557–68.
Abstract: We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported.
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