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Gol’tsman GN, Smirnov K, Kouminov P, Voronov B, Kaurova N, Drakinsky V, et al. Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans Appl Supercond. 2003;13(2):192–5.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Kawamura J, Tong C-YE, Blundell R, Papa DC, Hunter TR, Patt F, et al. Terahertz-frequency waveguide NbN hot-electron bolometer mixer. IEEE Trans Appl Supercond. 2001;11(1):952–4.
Abstract: We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz.
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Gerecht E, Musante CF, Zhuang Y, Yngvesson KS, Gol’tsman GN, Voronov BM, et al. NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers. IEEE Trans Appl Supercond. 1999;47(12):2519–27.
Abstract: New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Gol’tsman GN, Gershenzon EM. Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl Supercond. 1999;6(10-12):649–55.
Abstract: The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
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Il'in KS, Currie M, Lindgren M, Milostnaya II, Verevkin AA, Gol'tsman GN, et al. Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors. IEEE Trans Appl Supercond. 1999;9(2):3338–41.
Abstract: We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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