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Koshelets VP, Ermakov AB, Filippenko LV, Koryukin OV, Khudchenko AV, Sobolev AS, et al. Superconducting submm integrated receiver for TELIS. In: J. Phys.: Conf. Ser. Vol 43.; 2006. p. 1377–80.
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Koshelets VP, Shitov SV, Ermakov AB, Filippenko LV, Koryukin OV, Khudchenko AV, et al. Superconducting integrated receiver for TELIS. IEEE Trans. Appl. Supercond.. 2005;15(2):960–3.
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Koshelets VP, Ermakov AB, Filippenko LV, Khudchenko AV, Kiselev OS, Sobolev AS, et al. Superconducting integrated submillimeter receiver for TELIS. IEEE Trans. Appl. Supercond.. 2007;17(2):336–42.
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Gerecht E, Musante CF, Jian H, Yngvesson KS, Dickinson J, Waldman J, et al. New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz. IEEE Trans Appl Supercond. 1999;9(2):4217–20.
Abstract: NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
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Svechnikov SI, Okunev OV, Yagoubov PA, Gol'tsman GN, Voronov BM, Cherednichenko SI, et al. 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans Appl Supercond. 1997;7(2):3548–51.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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