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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. url  doi
openurl 
  Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
  Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 79 Issue 15 Pages 2483-2485  
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  ISSN (down) 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 311  
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Author Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. url  doi
openurl 
  Title Low noise superconducting single photon detectors on silicon Type Journal Article
  Year 2008 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 93 Issue 13 Pages 131101  
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  Notes Approved no  
  Call Number RPLAB @ s @ Serial 436  
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Author Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. url  doi
openurl 
  Title Resistive transition of niobium superconducting hot-electron bolometer mixers Type Journal Article
  Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2826  
  Keywords HEB  
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  ISSN (down) 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 543  
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. url  doi
openurl 
  Title Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate Type Journal Article
  Year 2007 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 91 Issue 6 Pages 062504 (1 to 3)  
  Keywords NbN films, nanofilms  
  Abstract The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
 
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  ISSN (down) 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1425  
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Author Baselmans, J.; Kooi, J.; Baryshev, A.; Yang, Z. Q.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. url  openurl
  Title Full characterization of small volume NbN HEB mixers for space applications Type Conference Article
  Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 457-462  
  Keywords NbN HEB mixers  
  Abstract NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer.  
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  Publisher Place of Publication Göteborg, Sweden Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 363  
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