Verevkin A, Gershenzon EM, Gol'tsman GN, Ptitsina NG, Chulkova GM, Smirnov KS, et al. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions. In: Mater. Sci. Forum. Vol 384-3.; 2002. p. 107–16.
Abstract: A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
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Verevkin A, Xu Y, Zheng X, Williams C, Sobolewski R, Okunev O, et al. Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range. In: Proc. 12th Int. Symp. Space Terahertz Technol.; 2001. p. 462–8.
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Xu Y, Zheng X, Williams C, Verevkin A, Sobolewski R, Chulkova G, et al. Ultrafast superconducting hot-electron single-photon detector. In: CLEO.; 2001. 345.
Abstract: Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.
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Verevkin AI, Ptitsina NG, Chulkova GM, Gol'tsman GN, Gershenzon EM, Yngvesson KS. Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures. JETP Lett. 1995;61(7):591–5.
Abstract: The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Varyukhin SV, Zakharov AA, Gershenzon EM, Gol'tsman GN, Ptitsina NG, Chulkova GM. Low energy excitation in La2CuO4. Sverkhprovodimost': Fizika, Khimiya, Tekhnika. 1990;3(5):832–7.
Abstract: Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
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