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Gundlach KH, Schicke M. SIS and bolometer mixers for terahertz frequencies. Supercond. Sci. Technol. 2000;13:181–7.
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Yagoubov P, Kroug M, Merkel H, Kollberg E, Schubert J, Hübers H-W. NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz. Supercond Sci Technol. 1999;12(11):989–91.
Abstract: The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported.
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Schubert J, Semenov A, Gol'tsman G, Hübers H-W, Schwaab G, Voronov B, et al. Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz. Supercond. Sci. Technol.. 1999;12(11):748–50.
Abstract: We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).
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Seleznev VA, Tarkhov MA, Voronov BM, Milostnaya II, Lyakhno VY, Garbuz AS, et al. Deposition and characterization of few-nanometers-thick superconducting Mo-Re films. Supercond Sci Technol. 2008;21(11):115006 (1 to 6).
Abstract: We report on the fabrication and investigation of few-nanometers-thick superconducting molybdenum-rhenium (Mo-Re) films intended for use in nanowire single-photon superconducting detectors (SSPDs). Mo-Re films were deposited on sapphire substrates by DC magnetron sputtering of an Mo(60)-Re(40) alloy target in an atmosphere of argon. The films 2-10 nm thick had critical temperatures (Tc) from 5.6 to 9.7 K. HRTEM (high-resolution transmission electron microscopy) analysis showed that the films had a homogeneous structure. XPS (x-ray photoelectron spectroscopy) analysis showed the Mo to Re atom ratio to be 0.575/0.425, oxygen concentration to be 10%, and concentration of other elements to be 1%.
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Il'in KS, Verevkin AA, Gol'tsman GN, Sobolewski R. Infrared hot-electron NbN superconducting photodetectors for imaging applications. Supercond Sci Technol. 1999;12(11):755–8.
Abstract: We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
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