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Baeva EM, Titova NA, Veyrat L, Sacépé B, Semenov AV, Goltsman GN, et al. Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates [Internet].; 2021 [cited 2024 Jun 28].arXiv:2101.07071v1 [cond-mat.mtrl-sci]. Available from: https://arxiv.org/abs/2101.07071v1
Abstract: Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Titova NA, Baeva EM, Kardakova AI, Goltsman GN. Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures. In: J. Phys.: Conf. Ser. Vol 1695.; 2020. 012190.
Abstract: Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
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Titova N, Gayduchenko IA, Moskotin MV, Fedorov GF, Goltsman GN. Carbon nanotube based terahertz radiation detectors. In: J. Phys.: Conf. Ser. Vol 1410.; 2019. 012208 (1 to 5).
Abstract: In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested.
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Saveskul NA, Titova NA, Baeva EM, Semenov AV, Lubenchenko AV, Saha S, et al. Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder [Internet].; 2019 [cited 2024 Jun 28].arXiv:1903.05009v3 [cond-mat.mtrl-sci]. Available from: https://arxiv.org/abs/1903.05009v3
Abstract: We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Tovpeko NA, Trifonov AV, Semenov AV, Antipov SV, Kaurova NS, Titova NA, et al. Bandwidth performance of a THz normal metal TiN bolometer-mixer. In: Proc. 30th Int. Symp. Space Terahertz Technol.; 2019. p. 102–3.
Abstract: We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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