Trifonov VA, Karasik BS, Zorin MA, Gol’tsman GN, Gershenzon EM, Lindgren M, et al. 9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film. Appl Phys Lett. 1996;68(10):1418–20.
Abstract: Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
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Nebosis RS, Heusinger MA, Schatz W, Renk KF, Gol’tsman GN, Karasik BS, et al. Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses. IEEE Trans Appl Supercond. 1993;3(1):2160–2.
Abstract: The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment.
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Karasik BS, Elantiev AI. Analysis of the noise performance of a hot-electron superconducting bolometer mixer. In: Proc. 6th Int. Symp. Space Terahertz Technol. ; 1995. p. 229–46.
Abstract: A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.
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Wyss RA, Karasik BS, McGrath WR, Bamble B, LeDuc H. Noise and bandwidth measurements of diffusion–cooled Nb hot–electron bolometer mixers at frequencies above the superconductive energy gap. In: Proc. 10th Int. Symp. Space Terahertz Technol. Charlottesville, Virginia; 1999. p. 215–29.
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Gershenson ME, Gong D, Sato T, Karasik BS, Sergeev AV. Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett.. 2001;79:2049–51.
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